SSD Goodbye, comes the super-fast Magnetic RAM

The use of NAND flash memory SSDs has definitely revolutionized the world of hard drives and storage devices for personal computers; better transfer rate, latency almost canceled IOPS values ​​previously unthinkable, are characteristics which we can not now give up. But there is a faster memory of the Nand Flash and certainly cheaper, we speak of the "old" RAM.

The Random Access Memory is fast but has the drawback of not permanently save the data when you switch off the system. The company EverSpin however, seems to have the problem by developing the new Magnetic RAM (MRAM), a type of memory that can precisely to maintain the data when we remove current.

The company is preparing to send the first module called ST-MRAM, with a capacity of 64GB and frequency of 1600 MHz, in short, a sort of DDR3 module to be inserted in the classic slot present on motherboards. There is no info on prices, but we hope that, given the low cost of the company DDR3 does weigh too much novelty factor. source via - extremetech.com

Corsair Vengeance DDR3-1600 MHz 16 GB: ideal for overclocking

According to sources, the range of Corsair added a new set of dual-channel memory modules Vengeance DDR3-1600 . In the catalog of the manufacturer set was designated CMZ16GX3M2A1600C9 .

 

The set consists of two modules total volume of 16 GB. The modules support the latest Intel XMP 1.3 Profiles and aim to work in tandem with Intel last generation (Ivy Bridge). The modules operate at 1600 MHz with 9-9-9-24 latencies with a voltage of 1.5 V.

The cost of memory modules Corsair Vengeance DDR3-1600 is 135 dollars.

Below the specifications:

Cooling methods	heatsink
Energy management
Voltage of the	1.5 V
Memory
Internal memory	16384 MB
Internal memory type	DDR3
Memory clock speed	1600 MHz
Appropriate use	PC / server
ECC	-
Memory layout	2 x 8192 MB
Memory form factor	240-pin DIMM
CAS Latency	9
Lead Plated	Gold
Type of packaging	DIMM
Unbuffered memory	Yes
Packaging
Package weight	59 g
Packing Dimensions (WxDxH)	15 x 135 x 150 mm

Corsair the line of DDR3 Vengeance with a new kit Dual-Channel 16 GB and a frequency equal to 1600 MHz The kit is initialed CMZ16GX3M2A1600C9 and is composed of two modules of 8 GB with timings to 9-9-9-24 and operating voltage of 1.5 volts. The modules are then equipped with the classic sink that characterizes the rest kit Vengeance and that can also do overclock safely.

Corsair Dominator Platinum: DDR3 Memory clocked at 3000 MHz

Corsair Dominator should update its proposal short of Memories RAM for high performance with a new model series DDR3 Dominator, in particular it seems that the company has on site a version of Platinum at a frequency of 3000 MHz , and dual and quad channel availability. The RAM is dedicated to overclocking enthusiasts and more technology will support Corsair Link that lets you monitor the status of memories.

 

The Corsair Dominator Platinum present a PCB with copper thermal pad and a system DHX (Dual-path) with aluminum fins to dissipate the heat produced. Above the heatsink Finally, there is provided a coating customizable and a bar of polished aluminum.

 

The Corsair Dominator memory Platinum will be available in capacities of 4 GB, compatible with both Intel and AMD systems, but prices have not yet been officially disclosed.  By

Samsung Galaxy S III 2 GB of RAM in Canada

Do not live in Canada means essentially two things: not being part of one of the nations most teasing in American TV (and this could perhaps be a good to a certain point of view), and never see models like the ' SGH-i747  ol ' SGH-iT999 or the Galaxy S III will arrive in Canada next June 20th , which differs from the smartphone on the market for us than to reveal the title of the article.

So let's not waste time talking and see immediately what will benefit the Canadian cousins:

• Processor:  Dual Core 1.5 GHz Snapdragon S4 Qualcomm MSM8960
• OS:  4.0.4 ICS
• Mobile network:  LTE (SGH-i747) and HSPA + 42 (SGH-iT999)
• Memory:  2 GB of RAM
• Dimensions:  136.6 x 70.6 x 8.6 mm
• Weight:  133 g
• Storage:  16/32GB (SGH-i747) / 16 GB (SGH-iT999) expandable via microSD up to 32GB
• Display:  Super HD 4.8 inch AMOLED 720 x 1280 (306ppi)
• Connect:  NFC, Bluetooth 4.0, DLNA, WiFi 802.11 a / ​​b / g / n, MHL Video Out
• Camera:  8 MP Rear, 1.9 MP front
• Battery:  2,100 mAh 

The more careful you will have noticed the difference: the macro-processor, which runs from international Exynos 4412 quad-core Snapdragon still very good at S4 Dual Core, now herald variants of LTE famous smartphone, through the different radio, and finally arriving to the disputed 2 GB of RAM , which we knew only in Japan . To mitigate some 'envy comes the bitter consolation of less storage space , which is at most only 32 GB in the SGH-i747. Unfortunately we do not have precise information on price, but when even the Galaxy S III with 32 GB from us costs only $ 966, perhaps in Canada do not regret much. What do you say, better to double the RAM, or twice the ROM?

Samsung launches first mobile LPDDR2 memory of 4 Gb density standards for the 20-nanometer class

According to the company Samsung Electronics, it was the first in the industry began to produce components such as memory density LPDDR2 4Gb on 20-nanometer technology class. The manufacturer does not result in the exact value of technological standards, explaining that the 20-nanometer process technologies related to the class, based on compliance from 20 to 29 nm. Serial production of the memory for mobile devices began in April.

 

The Samsung expects that the new memory to quickly replace the memory chips LPDDR2 1GB, now produced at rates of 30 nm-class.

Using the components of the density of 4 Gbps, Samsung can produce 2 GB chip with a thickness not exceeding 0.8 mm. Such a chip would be about 20% thinner than 2 GB chip, made of four crystal density LPDDR2 4Gb, made at rates of 30 nm-class, according to the manufacturer. The maximum speed of the new memory is 1066 Mb / s. Moreover, its energy is equal to power consumption of memory 2GB, made at rates 30-nanometer class.

The Galaxy S III will have 2 GB of RAM, but only in Japan

Samsung has not impressed enough from a technical standpoint with the presentation of the Galaxy S III? Would you have liked more hardware? If both answers are affirmative, there are good chances that you are not Japanese, at least if it was a greater amount of RAM that to which you were interested.

 

We have already seen that there is no single version of the flagship Samsung, as in America will be marketed with chip dual-core Snapdragon S4 and support networks to LTE , but the rest of its technical features will still be in line with the international version .

A little 'different, the situation for Japan, where the operator NTT DoCoMo confirms that the model he distributed, codenamed SC-06D, will always be based on Qualcomm processor, but will also have 2 GB of RAM.

Envy aside, this would be the perfect opportunity to test the real benefits of increased RAM, the model by comparing American and Japanese, virtually identical in all respects except that the amount memory. Unfortunately, we doubt they can achieve such a first-person head to head, but we will the results if someone will try it.

Intel Haswell-EX and DDR4 RAM in 2014

In 2014 the market will see the debut of the new server platform, Intel Hasweel-EX , a solution that provides up to 16 processor cores and DDR4 RAM. As for the consumer market, however, DDR4 memories will come a year later with the debut of 22-nanometer processors Hasweel, CPU and replaces the upcoming Ivy Bridge. In the future a bit 'farther see Broadwell from 14 nm processors compatible with socket LGA 1150 (as Hasweel and the rest).

But to see a spreading "capillary" Memoirs of DDR4 we should probably wait until 2015 with 14-nanometer processors Skylake. But what difference there is between DDR3 and DDR4?DDR4 memories consume much less, from 1.5 V to 1.2 V for DDR3 Furthermore, the present DDR4 greater protection and better error recovery.

Another record for AMD Bulldozer: DDR3 memory overclocked to 3311 MHz

Leading positions Zambezi processors with incredible ease taken in the discipline of CPU-Z, thus wresting the leadership from making Intel. Overclockers opened another discipline in which the Bulldozer can podsidet competitor - «Memory Clock DDR3». The name speaks for itself: to the maximum overclock of DDR3 memory and register the result obtained on the site Hwbot.org. For a long time in this discipline was dominated by the LGA 1156 platform with a processor-based architecture Lynnfield. The maximum result was obtained with the use of frozen storage and Kingston HyperX 1646 MHz was good.

Socket AM3 + platform has registered in the first place «Memory Clock DDR3» overclocker efforts _mat_ , who managed to overclock the memory ADATA Gaming 2.0 Hynix chips to the frequency of 1655.6 MHz (DDR3-3311).

The test stand consisted of a motherboard Asus Crosshair V Formula, and processor FX-8150. Extremely only cooled CPU, memory and fall to a "nitrogen breathing."

Bulldozer processors place prize in the two disciplines of overclocking is very good, but it does not improve their quality of consumer. I'd like to believe that the AMD FX chips will not play the role of a wedding sort of general who invited "on stage" only in exceptional cases.

Exceleram working on a 32GB memory kit for systems based on Sandy Bridge E

Manufacturer of storage and memory, the company Exceleram shared plans to produce a set of RAM 32GB total for the upcoming platform Sandy Bridge E.

Memory Kit Grand DDR3-Series will offer four memory strip 8GB, dressed in red radiators. Memory modules are clocked at 1333MHz with timings of CL 9-9-9-24, at a voltage of 1.5V.

At present the price set is unknown.