The R & D Center Samsung Advanced Institute of Technology has announced it has developed a new transistor structure of graphene, so moving an important step in the reduction of physical limits are currently being faced in the construction of the silicon chip. The transistors are made of silicon because of the typical properties of this semiconductor material, in the last 40 years the industry has been able to optimize performance and efficiency by reducing the production process, but one has to think about the future because the physical limit was almost reached.
Since the graphene has an electron mobility of about 200 times greater than that of silicon, this material has been considered a worthy substitute. A problem, however they will remain vigilant scientists is that the graphene can not be turned off the current as it is a semi-metallic material which then would decrease the mobility of electrons.
Samsung Advanced Institute of Technology has developed a device, however, able to turn off the power to graphene without degrading their mobility. The device has been called Barristor and allowed Samsung to possess 9 patents relating to the structure of the operating method of the Barristor.
The institute has solved the problem so difficult in research on graphene and opened the door to new directions for future studies. This innovation continues to keep Samsung Advanced Institute of Technology leaders in related industries in this sector.
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